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Basic measurement of bipolar and unipolar transistor
Kaňa, Leoš ; Šebesta, Jiří (referee) ; Dřínovský, Jiří (advisor)
In terms of the better effectiveness in the sphere of transistor characteristics measuring, no matter unipolar (FET) or bipolar (BJT), in laboratory conditions and their better understanding in terms of thrash out a subject matter is desirable have to available workplace let us say preparation enabling this kind of measuring with modifiability wiring and with possibility to change measured component. This thesis isn‘t focused only on development of this kind of universal component for measuring but simultaneously contains brief summary about the theory and parameters of transistors. Next aim is the development and realisation of static characteristic measuring program in VEE 8.0 Pro environment. Finally the complex laboratory exercise has to be done for measuring of bipolar and unipolar transistor’s static characteristics include programs for automatic measuring. For developing of DPS was used developing system named Eagle which gives us instrument with sufficiently accuracy. In thesis is contained theory needed for measuring and programming. Except possibility of measured component change we can change transistor connection in circuit on the board. This change is available for BJT (CE, CB, CC) and unipolar JFET (CS, CG, CD) transistor’s.
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Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
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Integrated temperature sensor bipolar core
Fránek, Jakub ; Prokop, Roman (referee) ; Kledrowetz, Vilém (advisor)
Cílem této práce je popsat možné způsoby realizace teplotního senzoru na křemíkovém čipu v běžných CMOS výrobních technologiích a představit konkrétní implementaci analogového jádra teplotního senzoru využívajícího bipolární tranzistory ve výrobní technologii TSMC 110. Techniky jako chopping, dynamic element matching nebo trimování byly použity k navržení obvodů, jejichž simulovaná 3 přesnost měření je ±3.5 °C bez trimování nebo ±0.6 °C s po jedné trimovací operaci napříč vojenským teplotním rozsahem. Navržené obvody zabírají pouze 0.012 mm čtverečních plochy čipu a jejich celkové parametry jsou srovnatelné s výsledky současných publikovaných prací.
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Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
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Integrated temperature sensor bipolar core
Fránek, Jakub ; Prokop, Roman (referee) ; Kledrowetz, Vilém (advisor)
Cílem této práce je popsat možné způsoby realizace teplotního senzoru na křemíkovém čipu v běžných CMOS výrobních technologiích a představit konkrétní implementaci analogového jádra teplotního senzoru využívajícího bipolární tranzistory ve výrobní technologii TSMC 110. Techniky jako chopping, dynamic element matching nebo trimování byly použity k navržení obvodů, jejichž simulovaná 3 přesnost měření je ±3.5 °C bez trimování nebo ±0.6 °C s po jedné trimovací operaci napříč vojenským teplotním rozsahem. Navržené obvody zabírají pouze 0.012 mm čtverečních plochy čipu a jejich celkové parametry jsou srovnatelné s výsledky současných publikovaných prací.
|
|
|
Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
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|
|
Basic measurement of dynamic properties of bipolar and unipolar transistors
Lang, Radek ; Šotner, Roman (referee) ; Dřínovský, Jiří (advisor)
The aim of this bachelor’s thesis is to describe the dynamic parameters of semiconductor devices. The other aim is to build a measuring workplace, on which is possible to carry out measurement of dynamic properties of bipolar and unipolar transistors. The bachelors’s thesis also solves a design and a production of an universal product, on which measurements are carried out. Individual measurement is automated and individual devices are connected to the product and results are controlled by computer analysis.
|
|
|
Basic measurement of bipolar and unipolar transistor
Kaňa, Leoš ; Šebesta, Jiří (referee) ; Dřínovský, Jiří (advisor)
In terms of the better effectiveness in the sphere of transistor characteristics measuring, no matter unipolar (FET) or bipolar (BJT), in laboratory conditions and their better understanding in terms of thrash out a subject matter is desirable have to available workplace let us say preparation enabling this kind of measuring with modifiability wiring and with possibility to change measured component. This thesis isn‘t focused only on development of this kind of universal component for measuring but simultaneously contains brief summary about the theory and parameters of transistors. Next aim is the development and realisation of static characteristic measuring program in VEE 8.0 Pro environment. Finally the complex laboratory exercise has to be done for measuring of bipolar and unipolar transistor’s static characteristics include programs for automatic measuring. For developing of DPS was used developing system named Eagle which gives us instrument with sufficiently accuracy. In thesis is contained theory needed for measuring and programming. Except possibility of measured component change we can change transistor connection in circuit on the board. This change is available for BJT (CE, CB, CC) and unipolar JFET (CS, CG, CD) transistor’s.
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